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A Product Line of
Diodes Incorporated
DMN3730U
1
r(t) @ D=0.5
0.1
0.01
0.001
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.01
r(t) @ D=0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
r(t) @ D=0.7
r(t) @ D=0.9
R θ JA (t) = r(t)*R θ JA
R θ JA = 176C/W
Duty Cycle, D = t1/t2
0.000001 0.00001
0.0001
0.001 0.01 0.1 1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
3
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 30V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
0.45
-
0.95
V
V DS = V GS , I D = 250 μ A
460
V GS = 4.5V, I D = 200mA
Static Drain-Source On-Resistance (Note 7)
R DS(on)
-
-
560
m Ω
V GS = 2.5V, I D = 100mA
730
V GS = 1.8V, I D = 75mA
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
40
-
-
0.7
-
1.2
mS
V
V DS = 3V, I D = 10mA
V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V,
I D = 1A
V DS = 10V, I D = 1A
V GS = 10V, R G = 6 Ω
Notes:
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
3 of 7
www.diodes.com
July 2011
? Diodes Incorporated
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